FMB2227A
Discrete Power
&
Signal Technologies
FMB2227A
C2
E1
C1
Package: SuperSOT-6
Device Marking:
.001
Note: The "
.
" (dot) signifies Pin 1
B2
E2
B1
Transistor 1 is NPN device,
transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
This complementary dual device was designed for use as a medium power amplifier and switch requiring
collector currents up to 300mA. Sourced from Pr19 (NPN) and Pr63 (PNP).
Absolute Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
STG
T
J
R
θJA
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @Ta = 25°C*
Storage Temperature Range
Junction Temperature
T
A
= 25°C unless otherwise noted
Value
30
60
5
500
0.7
-55 to +150
150
180
Units
V
V
V
mA
W
°C
°C
°C/W
Thermal Resistance, Junction to Ambient
Electrical Characteristics
Symbol
BV
CEO
BV
CBO
BV
EBO
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
T
A
= 25°C unless otherwise noted
Test Conditions
Ic = 10 mA
Ic = 10 uA
Ie = 10 uA
Min
30
60
5
Max
Units
V
V
V
©
1998 Fairchild Semiconductor Corporation
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2227A.lwpPr19&63(Y1)
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