September 2006
rev 0.3
Power Supply Characteristics
Symbol
I
CCL
I
CCH
I
CCZ
∆I
CC
I
CCD
PCS2P20805A
Parameter
Quiescent Power Supply
Current
Power Supply Current per
Input HIGH
Dynamic Power Supply
3
Current per Output
Test Conditions
1
V
CC
= Max. V
IN
= GND or V
CC
V
CC
= Max.
V
IN
= V
CC
–0.6V
V
CC
= Max.
C
L
= 15pF
All Outputs Toggling
V
CC
= Max.
C
L
= 15pF
All Outputs Toggling
f
i
= 133MHz
V
CC
= Max.
C
L
= 15pF
All Outputs Toggling
f
i
= 166MHz
V
IN
= V
CC
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= V
CC
–0.6V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= V
CC
–0.6V
V
IN
= GND
Min
Typ
2
0.1
35
65
Max
20
250
100
Unit
µA
µA
µA/MHz
140
140
170
170
160
160
mA
200
200
I
C
Total Power Supply
4
Current
Notes:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 2.5V, +25°C ambient.
3. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
4. I
C
= IQUIESCENT + IINPUTS + IDYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
O
N
O
)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= V
CC
-0.6V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
O
= Output Frequency
NO = Number of Outputs at f
O
2.5V CMOS Dual 1-To-5 Clock Driver
Notice: The information in this document is subject to change without notice.
4 of 11
PULSECORE [ PulseCore Semiconductor ]
