May 2008
rev 0.1
Electrical Characteristics
Parameter
V
IL
V
IH
I
IL
I
IH
V
OL
V
OH
I
DD
Z
o
PCS3P625Z05B/C
PCS3P625Z09B/C
Description
Input LOW Voltage
5
Input HIGH Voltage
5
Input LOW Current
Input HIGH Current
Output LOW Voltage
6
Output HIGH Voltage
6
Dynamic Supply Current
Output Impedance
V
IN
= 0V
Test Conditions
Min
2.0
Typ
Max
0.8
50
100
0.4
Unit
V
V
µA
µA
V
V
mA
Ω
V
IN
= VDD
I
OL
= 8mA
I
OH
= -8mA
Unloaded outputs
23
2.4
65
Note: 5. CLKIN input has a threshold voltage of VDD/2
6. Parameter is guaranteed by design and characterization. Not 100% tested in production
Switching Characteristics
Parameter
Input Frequency
Output Frequency
Duty Cycle
7,8
= (t
2
/ t
1
) * 100
Output Rise Time
7, 8
Output Fall Time
7, 8
Output-to-output skew
7, 8
Delay, CLKIN Rising Edge to
CLKOUT Rising Edge
8
Test Conditions
10pF load
Measured at VDD/2
Measured between 0.8V and 2.0V
Measured between 2.0V and 0.8V
All outputs equally loaded
Measured at VDD /2
Measured at VDD/2 on the CLKOUT pins
of the device
Loaded outputs
Stable power supply, valid clock presented
on CLKIN pin
Min
100
100
40
Typ
Max
175
175
Unit
MHz
MHz
%
nS
nS
pS
pS
pS
pS
mS
50
60
2.5
2.5
250
±350
700
±200
1.0
Device-to-Device Skew
8
Cycle-to-Cycle Jitter
7, 8
PLL Lock Time
8
Note: 7. All parameters specified with 10pF loaded outputs.
8. Parameter is guaranteed by design and characterization. Not 100% tested in production
High Frequency Timing-Safe™ Peak EMI Reduction IC
Notice: The information in this document is subject to change without notice.
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PULSECORE [ PulseCore Semiconductor ]
