P3C1011
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
Commercial
I
CC
Dynamic Operating Current* Industrial
Military
–10
90
N/A
N/A
–12
85
95
N/A
–15
80
90
N/A
–20
75
85
100
–25
70
80
95
–35
65
75
90
Unit
mA
mA
mA
*V
CC
= 3.6V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CE
= V
IL
,
OE
= V
IH
.
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC
= 3.3V ± 0.3V, All Temperature Ranges)
(2)
Sym.
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
OE
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable Low to Data Valid
3
3
-10
10
10
10
3
3
5
5
12
-12
15
12
12
3
3
6
6
-15
20
15
15
3
3
7
7
-20
-25
-35
Unit
ns
35
35
ns
ns
ns
ns
12
12
ns
ns
Min Max Min Max Min Max Min Max Min Max Min Max
25
20
20
3
3
8
8
10
10
25
25
35
3
3
t
OLZ
t
OHZ
t
PU
t
PD
t
BE
t
LZBE
t
HZBE
Output Enable Low to Low Z
Output Enable High to High Z
Chip Enable to Power Up Time
Chip Disable to Power Down Time
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
0
5
0
10
5
0
6
0
6
0
12
6
0
6
0
7
0
15
7
0
7
0
8
0
20
8
0
8
0
10
0
25
10
0
10
0
12
0
35
12
0
12
ns
ns
ns
ns
ns
ns
ns
Document #
SRAM131
REV OR
Page 3 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
