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P3C1041-15JI 参数 Datasheet PDF下载

P3C1041-15JI图片预览
型号: P3C1041-15JI
PDF下载: 下载PDF文件 查看货源
内容描述: 高速256K ×16 ( 4 MEG )静态CMOS RAM [HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM]
分类和应用:
文件页数/大小: 10 页 / 291 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P3C1041  
AC TEST CONDITIONS  
InputPulseLevels  
GND to 3.0V  
Input Rise and Fall Times  
InputTimingReferenceLevel  
OutputTimingReferenceLevel  
OutputLoad  
3ns  
1.5V  
1.5V  
See Figures 1 and 2  
Figure 1. Output Load  
Figure2. TheveninEquivalent  
* including scope and test fixture.  
Note:  
Because of the ultra-high speed of the P3C1041, care must be taken  
when testing this device; an inadequate setup can cause a normal  
functioning part to be rejected as faulty. Long high-inductance leads  
that cause supply bounce must be avoided by bringing the VCC and  
ground planes directly up to the contactor fingers. A 0.01 µF high  
frequency capacitor is also required between VCC and ground. To avoid  
signal reflections, proper termination must be used; for example, a 50Ω  
test environment should be terminated into a 50load with 1.73V  
(Thevenin Voltage) at the comparator input, and a 116resistor must  
be used in series with DOUT to match 166(Thevenin Resistance).  
TRUTH TABLE  
CE OE W E BLE BHE I/O0 - I/O7  
I/O8 - I/O15  
High Z  
DOUT  
Power  
Standby  
Active  
Active  
Active  
Mode  
H
L
X
L
X
H
X
L
X
L
High Z  
DOUT  
Power-down  
Read All Bits  
L
L
L
L
H
H
L
H
L
DOUT  
High Z  
DOUT  
Read Lower Bits Only  
Read Upper Bits Only  
Write All Bits  
H
High Z  
L
L
L
L
X
X
X
H
L
L
L
L
L
H
L
DIN  
DIN  
DIN  
High Z  
DIN  
Active  
Active  
Active  
Active  
Write Lower Bits Only  
L
H
H
X
High Z  
High Z  
Write Upper Bits Only  
Selected, Outputs Disabled  
X
High Z  
Document # SRAM130 REV OR  
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