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P4C1023-55CMB 参数 Datasheet PDF下载

P4C1023-55CMB图片预览
型号: P4C1023-55CMB
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗128K ×8单芯片使能CMOS静态RAM [LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM]
分类和应用:
文件页数/大小: 11 页 / 336 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1023/P4C1023L
TIMING WAVEFORM OF WRITE CYCLE NO.2 (CE CONTROLLED)
(6)
CE
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figures 1 and 2
TRUTH TABLE
Mode
Standby
D
OUT
Disabled
Read
Write
CE OE WE
H
L
L
L
X
H
L
X
X
H
H
L
I/O
High Z
High Z
D
OUT
D
IN
Power
Standby
Active
Active
Active
* including scope and test fixture.
Note:
Because of the high speed of the P4C1023L, care must be taken when
testing this device; an inadequate setup can cause a normal function-
ing part to be rejected as faulty. Long high-inductance leads that cause
supply bounce must be avoided by bringing the V
CC
and ground planes
directly up to the contactor fingers. A 0.01 µF high frequency capacitor
is also required between V
CC
and ground.
To avoid signal reflections, proper termination must be used; for
example, a 50Ω test environment should be terminated into a 50Ω
load with 1.77V (Thevenin Voltage) at the comparator input, and a
589Ω resistor must be used in series with D
OUT
to match 639Ω
(Thevenin Resistance).
Document #
SRAM126
REV OR
Page 6 of 11