P4C1024L
LOW POWER 128K x 8
CMOS STATIC RAM
FEATURES
V
CC
Current (Commercial/Industrial)
— Operating: 70mA/85mA
— CMOS Standby: 100µA/100µA
Access Times
—55/70 (Commercial or Industrial)
Single 5 Volts ±10% Power Supply
Easy Memory Expansion Using
CE
1,
CE
2
and
OE
Inputs
Common Data I/O
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Advanced CMOS Technology
Automatic Power Down
Packages
—32-Pin 600 mil Plastic and Ceramic DIP
—32-Pin 445 mil SOP
—32-Pin TSOP
DESCRIPTION
The P4C1024L is a 1,048,576-bit low power CMOS static
RAM organized as 128Kx8. The CMOS memory re-
quires no clocks or refreshing, and has equal access
and cycle times. Inputs are fully TTL-compatible. The
RAM operates from a single 5V±10% tolerance power
supply.
Access times of 55 ns and 70 ns are availale. CMOS is
utilized to reduce power consumption to a low level.
The P4C1024L device provides asynchronous opera-
tion with matching access and cycle times. Memory
locations are specified on address pins A
0
to A
16
. Read-
ing is accomplished by device selection (CE
1
low and
CE
2
high) and output enabling (OE) while write enable
(WE) remains HIGH. By presenting the address under
these conditions, the data in the addressed memory lo-
cation is presented on the data input/output pins. The
input/output pins stay in the HIGH Z state when either
CE
1
or
OE
is HIGH or
WE
or CE
2
is LOW.
The P4C1024L is packaged in a 32-pin TSOP, 445 mil
SOP, and a 600 mil PDIP.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DIP (P600, C10), SOP (S12)
TOP VIEW
See end of datasheet for TSOP pin configuration.
Document #
SRAM125
REV C
Revised September 2006
1
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
