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P4C116-10L32M 参数 Datasheet PDF下载

P4C116-10L32M图片预览
型号: P4C116-10L32M
PDF下载: 下载PDF文件 查看货源
内容描述: 超高速2K x 8静态CMOS RAMS [ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS]
分类和应用:
文件页数/大小: 14 页 / 239 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P4C116-10L32M的Datasheet PDF文件第2页浏览型号P4C116-10L32M的Datasheet PDF文件第3页浏览型号P4C116-10L32M的Datasheet PDF文件第4页浏览型号P4C116-10L32M的Datasheet PDF文件第5页浏览型号P4C116-10L32M的Datasheet PDF文件第7页浏览型号P4C116-10L32M的Datasheet PDF文件第8页浏览型号P4C116-10L32M的Datasheet PDF文件第9页浏览型号P4C116-10L32M的Datasheet PDF文件第10页  
P4C116/P4C116L  
AC TEST CONDITIONS  
TRUTH TABLE  
Mode  
CE  
OE WE  
I/O  
Power  
Input Pulse Levels  
GND to 3.0V  
Standby  
H
X
X
High Z  
Standby  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
3ns  
1.5V  
1.5V  
D
DOisUaTbled  
L
L
L
H
L
X
H
H
L
High Z  
DOUT  
High Z  
Active  
Active  
Active  
Read  
Write  
See Figures 1 and 2  
Figure 1. Output Load  
Figure 2. Thevenin Equivalent  
* including scope and test fixture.  
Note:  
Because of the ultra-high speed of the P4C116/L, care must be taken  
when testing this device; an inadequate setup can cause a normal  
functioning part to be rejected as faulty. Long high-inductance leads that  
cause supply bounce must be avoided by bringing the V and ground  
planes directly up to the contactor fingers. A 0.01 µF hCigCh frequency  
capacitor is also required between V and ground. To avoid signal  
reflections, proper termination must bCeC used; for example, a 50test  
environment should be terminated into a 50load with 1.73V (Thevenin  
Voltage) at the comparator input, and a 116resistor must be used in  
series with DOUT to match 166(Thevenin Resistance).  
Document # SRAM110 REV A  
Page 6 of 14