P4C116/P4C116L
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
–20
–15
–35
–10
–12
–25
Unit
Parameter
Write Cycle Time
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
Sym.
Min Max Min Max Min Max Min
Min Max Min Max
Max
tWC
10
8
15
12
12
0
12
0
20
15
15
0
15
0
25
18
18
0
18
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12
10
10
0
10
0
35
25
25
0
20
0
tCW
tAW
tAS
tWP
tAH
tDW
tDH
tWZ
tOW
8
0
8
Write Pulse Width
Address Hold Time
Data Valid to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
0
7
0
8
0
10
0
12
0
15
0
20
0
6
7
8
10
15
15
0
0
0
0
0
0
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(10,11)
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)(10)
Notes:
10. CE and WE must be LOW for WRITE cycle.
13. Write Cycle Time is measured from the last valid address to the first
transitioning address.
11. OE is LOW for this WRITE cycle to show t and t
.
12. If CE goes HIGH simultaneously with WE HIWGZH, theOoWutput remains
in a high impedance state
Document # SRAM110 REV A
Page 5 of 14
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
