P4C163/163L
AC CHARACTERISTICS—WRITE CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
-25
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Parameter
Write Cycle Time
Chip Enable
Time to End of Write
Address Valid to
End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time
Data Valid to End
of Write
Data Hold Time
Write Enable to
Output in High Z
Output Active
from End of Write
3
25
18
18
0
18
0
13
0
10
5
35
25
25
0
20
0
15
0
-35
45
33
33
0
25
0
20
0
14
5
-45
Unit
ns
ns
ns
ns
ns
ns
ns
ns
18
ns
ns
Min Max Min Max Min Max
WRITE CYCLE NO. 1 (WE CONTROLLED)
(11)
WE
Notes:
11.
CE
1
and
WE
must be LOW, and CE
2
HIGH for WRITE cycle.
12.
OE
is LOW for this WRITE cycle to show t
WZ
and t
OW
.
13. If
CE
1
goes HIGH, or CE
2
goes LOW, simultaneously with
WE
HIGH, the output remains in a low impedance state.
14. Write Cycle Time is measured from the last valid address to the first
transitioning address.
Document #
SRAM120
REV C
Page 6 of 12
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