P4C167/P4C167L
ULTRA HIGH SPEED 16K X 1
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25 ns (Commercial)
– 12/15/20/25/35 ns (Industrial)
– 15/20/25/35/45 ns (Military)
Low Power Operation
Single 5V±10% Power Supply
Data Retention with 2.0V Supply (P4C167L
Military)
Separate Data I/O
Three-State Output
TTL Compatible Output
Fully TTL Compatible Inputs
Standard Pinout (JEDEC Approved)
– 20-Pin 300 mil DIP
– 20-Pin 300 mil SOJ
– 20-Pin LCC
DESCRIPTION
The P4C167/L are 16,384-bit high speed static RAMs or-
ganized as 16K x 1. The CMOS memories require no clocks
or refreshing and have equal access and cycle times. The
RAMs operate from a single 5V ± 10% tolerance power
supply. Data integrity is maintained for supply voltages
down to 2.0V, typically drawing 10µA.
Access times as fast as 10 nanoseconds are available,
greatly enhancing system speeds. CMOS reduces power
consumption to low levels.
The P4C167/L are available in 20-pin 300 mil DIP, 20-pin
300 mil SOJ, and 20-pin LCC packages providing excel-
lent board level densities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
DIP (P2, C6)
SOJ (J2) SIMILAR
LCC (L9)
Document #
SRAM106
REV A
1
Revised October 2005
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
