P4C168, P4C169, P4C170
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Value
– 0.5 to +7
– 0.5 to
V
CC
+0.5
–55 to +125
Unit
V
Symbol
T
BIAS
T
STG
P
T
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
– 55 to +125
– 65 to +150
1.0
50
Unit
°C
°C
W
mA
V
TERM
T
A
V
°C
RECOMMENDED OPERATING CONDITIONS
Grade
(2)
Commercial
Military
Ambient Temp
0°C to 70°C
–55°C to +125°C
Gnd
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
5
7
pF
pF
Output Capacitance V
OUT
= 0V
DC ELECTRICAL CHARACTERISTICS
Symbol
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OLC
V
OH
V
OHC
I
LI
I
LO
I
CC
I
SB
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output Low Voltage
(CMOS Load)
Output High Voltage
(TTL Load)
Output High Voltage
(CMOS Load)
Input Leakage Current
Output Leakage Current
Dynamic Operating
Current
Standby Power Supply
Current (TTL Input Levels)
P4C168 only
Standby Power
Supply Current
(CMOS Input Levels)
P4C168 only
V
CC
= Min., I
IN
= –18 mA
I
OL
= +8 mA, V
CC
= Min.
I
OLC
= +100 µA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
I
OHC
= –100 µA, V
CC
= Min.
V
CC
= Max., V
IN
= GND to V
CC
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
Mil.
Comm’l
Mil.
Comm’l
2.4
V
CC
–0.2
–10
–5
–10
–5
___
___
Test Conditions
P4C168/169/170
Min
2.2
–0.5(3)
V
CC
–0.2
–0.5(3)
Max
V
CC
+0.5
0.8
V
CC
+0.5
0.2
–1.2
0.4
0.2
Unit
V
V
V
V
V
V
V
V
V
+10
+5
+10
+5
130
35
µA
µA
mA
mA
V
CC
= Max., f = Max., Outputs Open
CE
≥
V
IH
, V
CC
= Max., f = Max.,
Outputs Open
CE
≥
V
HC
, V
CC
= Max., f = 0,
Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
I
SB1
___
15
mA
Document #
SRAM107
REV A
Page 2 of 15
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
