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P4C188 参数 Datasheet PDF下载

P4C188图片预览
型号: P4C188
PDF下载: 下载PDF文件 查看货源
内容描述: 超高速16K ×4的静态CMOS RAMS [ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS]
分类和应用:
文件页数/大小: 12 页 / 204 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C188/188L
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)
(9)
CE
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figures 1 and 2
TRUTH TABLE
Mode
Standby
Read
Write
CE
H
L
L
WE
X
H
L
Output
High Z
D
OUT
D
IN
Power
Standby
Active
Active
Figure 1. Output Load
* including scope and test fixture.
Note:
Because of the ultra-high speed of the P4C188/L, care must be taken
when testing this device; an inadequate setup can cause a normal
functioning part to be rejected as faulty. Long high-inductance leads that
cause supply bounce must be avoided by bringing the V
CC
and ground
planes directly up to the contactor fingers. A 0.01 µF high frequency
Figure 2. Thevenin Equivalent
capacitor is also required between V
CC
and ground. To avoid signal
reflections, proper termination must be used; for example, a 50Ω test
environment should be terminated into a 50Ω load with 1.73V (Thevenin
Voltage) at the comparator input, and a 116Ω resistor must be used in
series with D
OUT
to match 166Ω (Thevenin Resistance).
Document #
SRAM112
REV A
Page 6 of 12