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P4C198L-10CMB 参数 Datasheet PDF下载

P4C198L-10CMB图片预览
型号: P4C198L-10CMB
PDF下载: 下载PDF文件 查看货源
内容描述: 超高速16K ×4的静态CMOS RAMS [ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS]
分类和应用:
文件页数/大小: 13 页 / 232 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C198/198L, P4C198A/198AL  
TRUTH TABLES  
P4C198/L  
P4C198A/L  
CE WE  
OE  
X
H
L
Mode  
Standby  
Output Inhibit  
READ  
Output  
High Z  
High Z  
DOUT  
CE1 CE2 WE  
OE  
X
X
H
L
X
Mode  
Standby  
Standby  
Output Inhibit  
READ  
Output  
High Z  
High Z  
High Z  
DOUT  
H
L
L
L
X
H
H
L
H
X
L
L
L
X
H
L
L
L
X
X
H
H
L
X
WRITE  
DIN  
WRITE  
DIN  
AC TEST CONDITIONS  
Input Pulse Levels  
GND to 3.0V  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
3ns  
1.5V  
1.5V  
See Figures 1 and 2  
Figure 2. Thevenin Equivalent  
Figure 1. Output Load  
* including scope and test fixture.  
Note:  
frequency capacitor is also required between V and ground. To avoid  
signal reflections, proper termination must be uCsCed; for example, a 50  
test environment should be terminated into a 50load with 1.73V  
(Thevenin Voltage) at the comparator input, and a 116resistor must  
be used in series with DOUT to match 166(Thevenin Resistance).  
Because of the ultra-high speed of the P4C198/L and P4C198A/L, care  
must be taken when testing this device; an inadequate setup can cause  
a normal functioning part to be rejected as faulty. Long high-inductance  
leads that cause supply bounce must be avoided by bringing the VCC and  
ground planes directly up to the contactor fingers. A 0.01 µF high  
Document # SRAM113 REV A  
Page 8 of 13