P4C198/198L, P4C198A/198AL
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Value
–0.5 to +7
–0.5 to
V
CC
+0.5
–55 to +125
Unit
V
Symbol
T
BIAS
T
STG
P
T
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
–55 to +125
–65 to +150
1.0
50
Unit
°C
°C
W
mA
V
TERM
T
A
V
°C
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade(2)
Military
Ambient
Temperature
GND
0V
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
5.0V ± 10%
CAPACITANCES
(4)
V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions Typ. Unit
V
IN
= 0V
V
OUT
= 0V
5
7
pF
pF
–55°C to +125°C
0°C to +70°C
Commercial
–40°C to +85°C
Industrial
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
Symbol
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
LO
I
SB
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
V
CC
= Min., I
IN
= –18 mA
I
OL
= +10 mA, V
CC
= Min.
I
OL
= +8 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
V
CC
= Max.
V
IN
= GND to V
CC
V
OUT
= GND to V
CC
V
CC
= Max.,
CE
= V
IH
,
Mil.
Ind./Com’l.
Mil.
Ind./Com’l.
Test Conditions
P4C198 / 198A
Min
Max
2.2
–0.5
(3)
–0.5
(3)
0.5
0.4
2.4
–10
–5
–10
–5
___
___
___
___
+10
+5
+10
+5
40
35
20
15
2.4
–5
n/a
–5
n/a
___
___
___
___
+5
n/a
+5
n/a
40
n/a
1.5
n/a
0.8
0.2
–1.2
0.5
0.4
P4C198L / 198AL
Unit
Min
Max
V
CC
+0.5
2.2
V
CC
+0.5 V
–0.5
(3)
–0.5
(3)
0.8
0.2
–1.2
V
V
V
V
V
V
V
µA
µA
mA
V
CC
–0.2 V
CC
+0.5 V
CC
–0.2 V
CC
+0.5
CE
1
,
CE
2
≥
V
IH
Mil.
Standby Power Supply
V
CC
= Max .,
Ind./Com’l.
Current (TTL Input Levels)
f = Max., Outputs Open
Standby Power Supply
Current
(CMOS Input Levels)
CE
1
,
CE
2
≥
V
IH
Mil.
V
CC
= Max.,
Ind./Com’l.
f = 0, Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
mA
I
SB1
n/a = Not Applicable
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM ratingconditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL
and I
IL
not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Document #
SRAM113
REV A
Page 2 of 13
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
