P4C198/198L, P4C198A/198AL
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
Commercial
Industrial
Military
198:
CE
= V
IL
,
OE
= V
IH
198A:
CE
1
= V
IL
,
CE
2
= V
IL
.
OE
= V
IH
–10
180
N/A
N/A
–12
170
180
N/A
–15
160
170
170
–20
155
160
160
–25
150
155
155
–35
N/A
150
150
–45
N/A
N/A
145
Unit
mA
mA
mA
I
CC
Dynamic Operating Current*
*V
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
DATA RETENTION CHARACTERISTICS (P4C198L/P4C198AL Military Temperature Only)
Symbol
V
DR
I
CCDR
t
CDR
t
R†
*
T
A
= +25°C
§
†
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Condition
Min
2.0
Typ.*
V
CC
=
2.0V
3.0V
10
15
Max
V
CC
=
2.0V
3.0V
600
900
Unit
V
µA
ns
ns
CE
≥V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V or
V
IN
≤
0.2V
0
t
RC§
t
RC
= Read Cycle Time
This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
Document #
SRAM113
REV A
Page 3 of 13
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