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P4C198L-35LMB 参数 Datasheet PDF下载

P4C198L-35LMB图片预览
型号: P4C198L-35LMB
PDF下载: 下载PDF文件 查看货源
内容描述: 超高速16K ×4的静态CMOS RAMS [ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 13 页 / 232 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C198/198L, P4C198A/198AL
TRUTH TABLES
P4C198/L
CE
H
L
L
L
WE
X
H
H
L
OE
X
H
L
X
Mode
Standby
Output Inhibit
READ
WRITE
Output
High Z
High Z
D
OUT
D
IN
P4C198A/L
CE
1
H
X
L
L
L
CE
2
X
H
L
L
L
WE
X
X
H
H
L
OE
X
X
H
L
X
Mode
Standby
Standby
Output Inhibit
READ
WRITE
Output
High Z
High Z
High Z
D
OUT
D
IN
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figures 1 and 2
Figure 1. Output Load
* including scope and test fixture.
Note:
Because of the ultra-high speed of the P4C198/L and P4C198A/L, care
must be taken when testing this device; an inadequate setup can cause
a normal functioning part to be rejected as faulty. Long high-inductance
leads that cause supply bounce must be avoided by bringing the V
CC
and
ground planes directly up to the contactor fingers. A 0.01 µF high
Figure 2. Thevenin Equivalent
frequency capacitor is also required between V
CC
and ground. To avoid
signal reflections, proper termination must be used; for example, a 50Ω
test environment should be terminated into a 50Ω load with 1.73V
(Thevenin Voltage) at the comparator input, and a 116Ω resistor must
be used in series with D
OUT
to match 166Ω (Thevenin Resistance).
Document #
SRAM113
REV A
Page 8 of 13