P4C198/198L, P4C198A/198AL
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
TBIAS
Temperature Under
Bias
–55 to +125
°C
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TSTG
PT
IOUT
Storage Temperature
Power Dissipation
DC Output Current
–65 to +150
°C
W
mA
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
VTERM
TA
VCC +0.5
V
1.0
50
Operating Temperature –55 to +125 °C
CAPACITANCES(4)
RECOMMENDED OPERATING
VCC = 5.0V, TA = 25°C, f = 1.0MHz
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Symbol
Parameter
Conditions Typ. Unit
VCC
Grade(2)
GND
Temperature
CIN
COUT
VIN = 0V
VOUT = 0V
pF
pF
Military
Commercial
Industrial
0V
0V
0V
5.0V ± 10%
5.0V ± 10%
5.0V ± 10%
Input Capacitance
Output Capacitance
5
7
–55°C to +125°C
0°C to +70°C
–40°C to +85°C
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
P4C198 / 198A
P4C198L / 198AL
Symbol
Parameter
Test Conditions
Unit
Min
Max
Min
Max
VIH
VIL
VHC
VLC
VCD
2.2
–0.5(3)
VCC +0.5
2.2
–0.5(3)
VCC +0.5
V
V
V
V
V
Input High Voltage
0.8
0.8
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5
–0.5(3)
0.2
–0.5(3)
0.2
VCC = Min., IIN = –18 mA
–1.2
–1.2
Input Clamp Diode Voltage
Output Low Voltage
IOL = +10 mA, VCC = Min.
V
V
0.5
2.4
0.5
2.4
VOL
(TTL Load)
IOL = +8 mA, VCC = Min.
0.4
0.4
Output High Voltage
(TTL Load)
VOH
V
IOH = –4 mA, VCC = Min.
VCC = Max.
Mil.
–10
–5
+10
+5
–5
+5
µA
ILI
Input Leakage Current
Output Leakage Current
n/a
n/a
VIN = GND to VCC
VCC = Max., CE = VIH,
Ind./Com’l.
Mil.
–10
–5
+10
+5
–5
+5
µA
ILO
n/a
n/a
VOUT = GND to VCC Ind./Com’l.
___
___
___
___
CE1, CE2 ≥ V
Mil.
40
35
40
mA
VCC = Max ., IH
Ind./Com’l.
n/a
Standby Power Supply
ISB
Current (TTL Input Levels)
f = Max., Outputs Open
___
___
___
___
20
15
1.5
n/a
mA
CE1, CE2 ≥ VIH
Mil.
Ind./Com’l.
Standby Power Supply
Current
VCC = Max.,
ISB1
f = 0, Outputs Open
VIN ≤ VLC or VIN ≥ VHC
(CMOS Input Levels)
n/a = Not Applicable
Notes:
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM ratingconditions for extended
periods may affect reliability.
Document # SRAM113 REV A
Page 2 of 13
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
