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HYB18T512160B2F-3.7 参数 Datasheet PDF下载

HYB18T512160B2F-3.7图片预览
型号: HYB18T512160B2F-3.7
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位双数据速率 - 双SDRAM的 [512-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 69 页 / 3853 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T512[40/80/16]0B2[C/F](L)  
512-Mbit Double-Data-Rate-Two SDRAM  
FIGURE 2  
Chip Configuration for ×8 components, PG-TFBGA-60 (top view)  
$
9''  
966  
9664  
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Notes  
4. VDDL and VSSDL are power and ground for the DLL. VDDL is  
connected to VDD on the device. VDD, VDDQ, VSSDL, VSS  
and VSSQ are isolated on the device.  
5. Ball position L8 is A13 for 512-Mbit and is Not Connected  
on 256-Mbit.  
,
1. RDQS / RDQS are enabled by EMRS(1) command.  
2. If RDQS / RDQS is enabled, the DM function is disabled  
3. When enabled, RDQS & RDQS are used as strobe  
signals during reads.  
Rev. 1.12, 2007-05  
16  
10062006-YPTZ-CDR7