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HYB18TC1G800BF 参数 Datasheet PDF下载

HYB18TC1G800BF图片预览
型号: HYB18TC1G800BF
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位双数据速率- SDRAM双 [1-Gbit Double-Data-Rate-Two SDRAM]
分类和应用: 动态存储器
文件页数/大小: 65 页 / 3555 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet
HYB18TC1G[80/16]0BF
1-Gbit Double-Data-Rate-Two SDRAM
1.2
Description
latched at the cross point of differential clocks (CK rising and
CK falling). All I/Os are synchronized with a single ended
DQS or differential DQS-DQS pair in a source synchronous
fashion.
A 17 bit address bus for
×8
organised components and a
16 bit address bus for
×16
components is used to convey row,
column and bank address information in a RAS-CAS
multiplexing style.
The DDR2 device operates with a 1.8 V
±
0.1 V power
supply. An Auto-Refresh and Self-Refresh mode is provided
along with various power-saving power-down modes.
The functionality described and the timing specifications
included in this data sheet are for the DLL Enabled mode of
operation.
The DDR2 SDRAM is available in PG-TFBGA package.
The 1-Gbit DDR2 DRAM is a high-speed Double-Data-Rate-
Two CMOS Synchronous DRAM device containing
1,073,741,824 bits and internally configured as anoctal quad-
bank DRAM. The 1-Gb device is organized as either 16 Mbit
×8
I/O
×8
banks or 8 Mbit
×16
I/O
×8
banks chip. These
synchronous devices achieve high speed transfer rates
starting at 400 Mb/sec/pin for general applications.
The device is designed to comply with all DDR2 DRAM key
features:
1. Posted CAS with additive latency,
2. Write latency = read latency - 1,
3. Normal and weak strength data-output driver,
4. Off-Chip Driver (OCD) impedance adjustment
5. On-Die Termination (ODT) function.
All of the control and address inputs are synchronized with a
pair of externally supplied differential clocks. Inputs are
TABLE 5
Ordering Information for RoHS compliant products
Product Type
HYB18TC1G160BF-2.5
HYB18TC1G800BF-2.5
HYB18TC1G160BF-3S
HYB18TC1G800BF-3S
HYB18TC1G160BF-3.7
HYB18TC1G800BF-3.7
HYB18TC1G160BF-5
HYB18TC1G800BF-5
1) CAS: Column Address Strobe
2) RCD: Row Column Delay
3) RP: Row Precharge
Org.
×16
×8
×16
×8
×16
×8
×16
×8
Speed
DDR2-800E
DDR2-800E
DDR2-667D
DDR2-667D
DDR2-533C
DDR2-533C
DDR2-400B
DDR2-400B
CAS-RCD-RP
Latencies
1)2)3)
6-6-6
6-6-6
5-5-5
5-5-5
4-4-4
4-4-4
3-3-3
3-3-3
Clock
(MHz)
400
400
333
333
266
266
200
200
Package
PG-TFBGA-84
PG-TFBGA-68
PG-TFBGA-84
PG-TFBGA-68
PG-TFBGA-84
PG-TFBGA-68
PG-TFBGA-84
PG-TFBGA-68
Note: For product nomenclature see
of this data sheet
Rev. 1.21, 2007-07
02282007-F8UP-4HSU
6