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HYB25D128160CT-6 参数 Datasheet PDF下载

HYB25D128160CT-6图片预览
型号: HYB25D128160CT-6
PDF下载: 下载PDF文件 查看货源
内容描述: 128 - Mbit的双数据速率SDRAM [128-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 35 页 / 1979 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25D128xxxC[C/E/F/T](L)  
128-Mbit Double-Data-Rate SDRAM  
TABLE 10  
Truth Table 1a: Commands  
Name (Function)  
CS RAS CAS WE Address  
MNE  
Note  
1)2)  
Deselect (NOP)  
H
L
L
L
L
L
L
L
L
X
H
L
X
H
H
L
X
H
H
H
L
X
X
NOP  
NOP  
1)2)  
No Operation (NOP)  
1)3)  
Active (Select Bank And Activate Row)  
Read (Select Bank And Column, And Start Read Burst)  
Write (Select Bank And Column, And Start Write Burst)  
Burst Terminate  
Bank/Row ACT  
1)4)  
H
H
H
L
Bank/Col  
Bank/Col  
X
Read  
Write  
BST  
1)4)  
L
1)5)  
H
H
L
L
1)6)  
Precharge (Deactivate Row In Bank Or Banks)  
Auto Refresh Or Self Refresh (Enter Self Refresh Mode)  
Mode Register Set  
L
Code  
PRE  
1)7)8)  
1)9)  
L
H
L
X
AR/SR  
MRS  
L
L
Op-Code  
1) CKE is HIGH for all commands shown except Self Refresh.VREF must be maintained during Self Refresh operation.  
2) Deselect and NOP are functionally interchangeable.  
3) BA0-BA1 provide bank address and A0-A11 provide row address.  
4) BA0, BA1 provide bank address; A0-Ai provide column address (where i = 8 for x16, i = 9 for x8 and 9, 11 for x4); A10 HIGH enables the  
Auto Precharge feature (nonpersistent), A10 LOW disables the Auto Precharge feature.  
5) Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should not be used) for read bursts with Auto  
Precharge enabled or for write bursts.  
6) A10 LOW: BA0, BA1 determine which bank is precharged. A10 HIGH: all banks are precharged and BA0, BA1 are “Don’t Care”.  
7) This command is Auto Refresh if CKE is HIGH; Self Refresh if CKE is LOW.  
8) Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care” except for CKE.  
9) BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1 = 0 selects  
Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A11 provide the op-code to be written to the selected Mode  
Register).  
TABLE 11  
Truth Table 1b: DM Operation  
Name (Function)  
DM  
DQs  
Note  
1)  
Write Enable  
L
Valid  
X
1)  
Write Inhibit  
H
1) Used to mask write data; provided coincident with the corresponding data.  
Rev. 1.6, 2007-02  
15  
03292006-U5AN-6TI1