Internet Data Sheet
HYB25DC128[800/160]C[E/F]
128-Mbit Double-Data-Rate SDRAM
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a
strobe transmitted by the during Reads and by the memory controller during Writes. DQS is edge-aligned with data for Reads
and center-aligned with data for Writes.
The 128-Mbit Double-Data-Rate SDRAM operates from a differential clock (CK and CK; the crossing of CK going HIGH and
CK going LOW is referred to as the positive edge of CK). Commands (address and control signals) are registered at every
positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as
well as to both edges of CK.
Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a
programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active command,
which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used
to select the bank and row to be accessed. The address bits registered coincident with the Read or Write command are used
to select the bank and the starting column location for the burst access.
The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4 or 8 locations. An Auto Precharge function
may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
As with standard SDRAMs, the pipelined, multibank architecture of DDR SDRAMs allows for concurrent operation, thereby
providing high effective bandwidth by hiding row precharge and activation time.
An auto refresh mode is provided along with a power-saving power-down mode. All inputs are compatible with the Industry
Standard for SSTL_2. All outputs are SSTL_2, Class II compatible.
Note: The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of
operation.
TABLE 2
Order Information for RoHS Compliant Products
Part Number
1)
HYB25DC128800CE-5
HYB25DC128160CE-5
HYB25DC128160CF-5
HYB25DC128800CE–6
HYB25DC128160CE–6
HYB25DC128800CF–6
HYB25DC128160CF–6
Org. CAS-RCD-RP
Latencies
×8
×16
×16
×8
×16
×8
×16
PG-TFBGA-60
2.5-3-3
166
2-3-3
133
PG-TFBGA-60
DDR333B PG-TSOPII-66
3-3-3
Clock CAS-RCD-RP Clock Speed
(MHz) Latencies
(MHz)
200
2.5-3-3
166
Package
Note
2)
DDR400B PG-TSOPII-66
1) HYB: designator for memory components
25DC: s at
V
DDQ
= 2.5 V
128: 128-Mbit density
800/160: Product variations
×8
and
×16
C: Die revision C
F/E: Package type TSOP and FBGA
L: Low power version (available on request) - these components are specifically selected for low
I
DD6
Self Refresh currents
-5, - 6: speed grade
2) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.1, 2007-01
03062006-JXUK-E7R1
4
QIMONDA [ QIMONDA AG ]
