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HYB25DC512160CE-6 参数 Datasheet PDF下载

HYB25DC512160CE-6图片预览
型号: HYB25DC512160CE-6
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的双数据速率SDRAM [512-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率
文件页数/大小: 35 页 / 1891 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet
HYB25DC512[800/160]C[E/F]
512-Mbit Double-Data-Rate SDRAM
TABLE 6
Mode Register Definition
Field
BL
Bits
[2:0]
Type
1)
W
Description
Burst Length
Number of sequential bits per DQ related to one read/write command.
Note: All other bit combinations are RESERVED.
001
B
2
010
B
4
011
B
8
BT
3
Burst Type
See
for internal address sequence of low order address bits.
0 Sequential
1 Interleaved
CAS Latency
Number of full clocks from read command to first data valid window.
Note: All other bit combinations are RESERVED.
010
B
011
B
110
B
101
B
Note:
MODE
[12:7]
2
3
2.5
1.5
CL = 1.5 for DDR200 components only
CL
[6:4]
Operating Mode
Note: All other bit combinations are RESERVED.
000000 Normal Operation without DLL Reset
000010 Normal Operation with DLL Reset
1) W = write only register bit
Rev. 1.3, 2006-12
03292006-W2FE-ELDX
12