Data Sheet
HY[B/I]39S128[40/80/16][0/7]F[E/T](L)
128-MBit Synchronous DRAM
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1.1
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Overview
Features
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Data Mask for Read / Write control (x4, x8)
Data Mask for Byte Control (x16)
Auto Refresh (CBR) and Self Refresh
Power Down and Clock Suspend Mode
4096 refresh cycles / 64 ms (15.6
μs)
Random Column Address every CLK (1-N Rule)
Single 3.3 V ± 0.3 V Power Supply
LVTTL Interface
Plastic Packages: P(G)–TSOPII–54 400 mil width
This chapter lists all main features of the product family HY[B/I]39S128[40/80/16][0/7]F[E/T](L) and the ordering information.
Fully Synchronous to Positive Clock Edge
0 to 70
°C
Standard Operating Temperature
-40 to 85
°C
Industrial Operating Temperature
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2 & 3
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length: 1, 2, 4, 8 and full page
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
TABLE 1
Performance
Product Type Speed Code
Speed Grade
Max. Clock Frequency
@CL3
–7
PC133–222
Unit
—
MHz
ns
ns
ns
ns
@CL2
f
CK3
t
CK3
t
AC3
t
CK2
t
AC2
143
7
5.4
7.5
5.4
1.2
Description
The HY[B/I]39S128[40/80/16][0/7]F[E/T](L) are four bank Synchronous DRAM’s organized as 32 MBit x4, 16 MBit x8
and 8 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by
employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip
is fabricated with Qimonda’s advanced 0.11
μm
128-MBit DRAM process technology.
The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and
mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally
supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is
possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and
speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± 0.3 V power supply.
All 128-Mbit components are available in P(G)–TSOPII–54 packages.
Rev. 1.32, 2007-10
10122006-I6LJ-WV3H
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QIMONDA [ QIMONDA AG ]
