HYB39S512160AT-7.5 参数 Datasheet PDF下载

Internet Data Sheet

HY[I/B]39S512[40/80/16]0A[E/T]

512-Mbit Synchronous DRAM

4

4.1

Electrical Characteristics

Operating Conditions

TABLE 7

Absolute Maximum Ratings

Parameter

Symbol

Limit Values

Min.

Max.

+4.6

+4.6

+4.6

+70

+85

+150

1

50

Unit

Note/

Test Condition

—

—

—

—

—

—

—

—

Input / Output voltage relative to

V

SS

Voltage on

V

DD

supply relative to

V

SS

Voltage on

V

DDQ

supply relative to

V

SS

Operating Temperature for HYB...

Operating Temperature for HYI...

Storage temperature range

Power dissipation per SDRAM component

Data out current (short circuit)

V

IN

,

V

OUT

V

DD

V

DDQ

T

A

T

A

T

STG

P

D

I

OUT

–1.0

–1.0

–1.0

0

–40

–55

—

—

V

V

V

°C

°C

°C

W

mA

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings

are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated

circuit.

Rev. 1.52, 2007-06

03292006-6Y91-0T2Z

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