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HYB39SC256800FE-6 参数 Datasheet PDF下载

HYB39SC256800FE-6图片预览
型号: HYB39SC256800FE-6
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位同步DRAM [256-MBit Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 24 页 / 1319 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]39SC256[80/16]0F[E/F]  
256-MBit Synchronous DRAM  
4
Electrical Characteristics  
4.1  
Operating Conditions  
TABLE 7  
Absolute Maximum Ratings  
Parameter  
Symbol  
Limit Values  
Min.  
Unit  
Note/  
Test Condition  
Max.  
Input / Output voltage relative to VSS  
Voltage on VDD supply relative to VSS  
Voltage on VDDQ supply relative to VSS  
Operating Temperature for HYB...  
Operating Temperature for HYI...  
Storage temperature range  
VIN, VOUT  
VDD  
–1.0  
–1.0  
–1.0  
0
+4.6  
+4.6  
+4.6  
+70  
+85  
+150  
1
V
V
VDDQ  
TA  
V
°C  
°C  
°C  
W
mA  
TA  
-40  
–55  
TSTG  
PD  
Power dissipation per SDRAM component  
Data out current (short circuit)  
IOUT  
50  
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings  
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated  
circuit.  
Rev. 1.25, 2007-06  
13  
03062006-NMGU-CQ9D