互联网数据表
HY[B/I]18T1G[40/80/16]0B[C/F](L/V)
1千兆位双数据速率- SDRAM双
产品类型
HYB18T1G400BF-3.7
HYB18T1G400BFL-3.7
HYB18T1G800BF-3.7
HYB18T1G800BFL-3.7
HYB18T1G160BF-3.7
HYB18T1G160BFL-3.7
HYB18T1G160BFV-3.7
HYB18T1G167BF-3.7
HYB18T1G400BF-5
HYB18T1G400BFL-5
HYB18T1G800BF-5
HYB18T1G800BFL-5
HYB18T1G160BF-5
HYB18T1G160BFL-5
HYI18T1G400BF-2.5F
HYI18T1G800BF-2.5F
HYI18T1G160BF-2.5F
HYI18T1G400BF-2.5
HYI18T1G800BF-2.5
HYI18T1G160BF-2.5
HYI18T1G400BF-3
HYI18T1G800BF-3
HYI18T1G160BF-3
HYI18T1G400BF-3S
HYI18T1G800BF-3S
HYI18T1G160BF-3S
HYI18T1G400BF-3.7
HYI18T1G800BF-3.7
HYI18T1G160BF-3.7
HYI18T1G400BF-5
HYI18T1G800BF-5
HYI18T1G160BF-5
1)
2)
3)
4)
组织。速度
×4
×4
×8
×8
×16
×16
×16
×16
×4
×4
×8
×8
×16
×16
×4
×8
×16
×4
×8
×16
×4
×8
×16
×4
×8
×16
×4
×8
×16
×4
×8
×16
CAS- RCD -RP潜伏期
1)2)3)
时钟频率（MHz ）封装
266
PG-TFBGA-68
记
DDR2-533C 4-4-4
PG-TFBGA-84
PG-TFBGA-92
DDR2-400B 3-3-3
200
PG-TFBGA-68
PG-TFBGA-84
工业级温度范围（-40
°C
- +85 °C)
DDR2-800D 5-5-5
400
PG-TFBGA-68
PG-TFBGA-84
DDR2-800E 6-6-6
400
PG-TFBGA-68
PG-TFBGA-84
DDR2-667C 4-4-4
333
PG-TFBGA-68
PG-TFBGA-84
DDR2-667D 5-5-5
333
PG-TFBGA-68
PG-TFBGA-84
DDR2-533C 4-4-4
266
PG-TFBGA-68
PG-TFBGA-84
DDR2-400B 3-3-3
200
PG-TFBGA-68
PG-TFBGA-84
CAS ：列地址选通
RCD ：行列延时
RP ：行预充电
符合RoHS产品：利用在电子电气设备中某些有害物质指令（RoHS ）的限制，定义
在指令2002/95 /由27理事会，欧洲议会和2003年1月发行的这些物质包括汞EC ，
铅，镉，六价铬，多溴联苯和多溴联苯醚。
修订版1.3 ， 2007-07
03062006-ZNH8-HURV
6
QIMONDA [ QIMONDA AG ]
