WIDE BODY, HIGH ISOLATION
OPTOCOUPLERS
DESCRIPTION
The CNW82, CNW83, CNW84 and CNW85 optocouplers consist
of a GaAs infrared emitting diode which is optically coupled to an
NPN phototransistor.
The CNW82 and CNW84 do not have the base pin connected for
improved noise immunity.
6
1
6
1
SCHEMATIC
1
NC
6
FEATURES
• Wide body DIL encapsulation, with a pin distance of 10.16 mm.
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage,
making the device suitable for use with TTL integrated
circuits.
• High degree of AC and DC insulation (5900 V (RMS) and
8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and
3
CNW82
CNW83
CNW84
CNW85
1
6
2
5
2
5
NC
4
detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external
creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)
CNW82/84
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
3
NC
4
CNW83/85
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
ABSOLUTE MAXIMUM RATINGS
Parameter
EMITTER
Forward Current - Continuous
Forward Current - Peak (PW = 100µs, 120pps)
Reverse Voltage
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector Current-Continuous
Emitter-Collector Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
TOTAL DEVICE
Storage Temperature Range
Ambient Operating Temperature Range
Lead Soldering Temperature
(1/16” from case, 10 sec. duration)
(CNW82/CNW83)
(CNW84/CNW85)
(CNW83)
(CNW85)
V
ECO
V
CEO
V
CBO
P
D
T
stg
T
A
T
L
Symbol
I
F
I
F
(pk)
V
R
P
D
I
C
Value
100
3
5
200
2.0
100
7
50
80
70
120
200
2.0
-55 to 150
-40 to 100
260
Units
mA
A
V
mW
mW/°C
mA
V
V
V
mW
mW/°C
°C
°C
°C
1/18/00
200015A
QT [ QT OPTOELECTRONICS ]
