6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
DESCRIPTION
The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W,
consist of a gallium arsenide infrared emitting diode driving a
silicon phototransistor in a 6-pin dual in-line package.
PACKAGE DIMENSIONS
FEATURES
• Input/Output pin distance 10.16 mm
• UL recognized (File # E90700)
0.270 (6.86)
0.240 (6.10)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
SCHEMATIC
1
NC
6
1
6
1
SEATING PLANE
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
6
0.200 (5.08)
0.115 (2.92)
2
5
2
5
0.154 (3.90)
0.100 (2.54)
0.004 (0.10)
MIN
0.016 (0.40)
0.008 (0.20)
3
NC
CNX82A.W
SL5582.W
4
3
NC
CNX83A.W
SL5583.W
4
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0° to 15°
0.400 (10.16)
TYP
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
NOTE
All dimensions are in inches (millimeters)
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature
Total Device Power Dissipation @ T
A
= 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage (CNX83A)
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Symbol
T
STG
T
OPR
T
SOL
T
J
P
D
I
F
V
R
I
F
(pk)
P
D
V
CEO
V
CBO
V
ECO
I
C
P
D
Value
-55 to +150
-55 to +100
260 for 10 sec
125
250
100
5.0
3.0
140
1.33
50
70
7
100
150
2.0
Units
°C
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
V
mA
mW
mW/°C
4/13/00
200024D
QT [ QT OPTOELECTRONICS ]
