4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES
H11A817 SERIES
PACKAGE DIMENSIONS
DESCRIPTION
The QT Optoelectronics H11AA814 Series consists
of two gallium arsenide infrared emitting diodes, con-
nected in inverse parallel, driving a single silicon
phototransistor in a 4-pin dual in-line package.
.380
(9.64)
MAX
.012 (.30)
.007 (.20)
.055 (1.40)
.047 (1.20)
4
3
.270 (6.86)
.248 (6.30)
.327
(8.30)
MAX
.300
(7.62)
MIN
The H11A817 Series consists of a gallium arsenide
infrared emitting diode driving a silicon phototransis-
tor in a 4-pin dual in-line package.
1
2
.187 (4.75)
.175 (4.45)
FEATURES
0 to 15°
s
s
.200
(5.10)
MAX
.158 (4.01)
.144 (3.68)
.020 (.51) MIN
.154 (3.90)
.120 (3.05)
Compact 4-pin package
Current transfer ratio in selected groups:
H11AA814: 20-300%
H11AA814A: 50-150%
H11A817:
H11A817A:
H11A817B:
H11A817C:
H11A817D:
50-600%
80-160%
130-260%
200-400%
300-600%
.022 (.56)
.015 (.40)
.100 (2.54) TYP
APPLICATIONS
1
4
COLLECTOR
ANODE
1
4
COLLECTOR
2
3
EMITTER
CATHODE
2
3
EMITTER
Equivalent Circuit (H11AA814)
Equivalent Circuit (H11A817)
H11AA814 Series
s
AC line monitor
s
Unknown polarity DC sensor
s
Telephone line interface
H11A817 Series
s
Power supply regulators
s
Digital logic inputs
s
Microprocessor inputs
s
Industrial controls
NOTE: ALL DIMENSIONS ARE IN INCHES (mm)
PACKAGE CODE T
ABSOLUTE MAXIMUM RATING
TOTAL PACKAGE
Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C
Operating temperature . . . . . . . . . . . . . . . -55° to 100° C
Lead solder temperature . . . . . . . . . . . 260° C for 10 sec
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 200 mW
INPUT DIODE
Power dissipation (25° C ambient) . . . . . . . . . . . .70 mW
Derate linearly (above 25° C) . . . . . . . . . . . .1.33 mW/° C
Continuous forward current . . . . . . . . . . . . . . . . . . 50 mA
Peak forward current (1 µs pulse, 300 pps) . . . . . . . . .1 A
Reverse voltage (H11A817) . . . . . . . . . . . . . . . . . . . . 5 V
OUTPUT TRANSISTOR
Power dissipation (25° C ambient) . . . . .150 mW
Derate linearly (above 25° C) . . . . . .2.0 mW/° C
V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Continuous collector current . . . . . . . . . . 50 mA
QT [ QT OPTOELECTRONICS ]
