QED121/122/123
PLASTIC INFRARED LIGHT EMITTING DIODE
PACKAGE DIMENSIONS
0.195 (4.95)
FEATURES
•
!=
880 nm
REFERENCE
SURFACE
0.305 (7.75)
• Chip material = AlGaAs
• Package type: T-1 3/4 (5mm lens diameter)
• Matched Photosensor: QSD122/123/124
0.040 (1.02)
NOM
0.800 (20.3)
MIN
• Narrow Emission Angle, 18°
• High Output Power
• Package material and color: Clear, peach tinted, plastic
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
NOTES:
1. Derate power dissipation linearly 2.67
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron
1/16”
(1.6mm) minimum
from housing.
SCHEMATIC
ANODE
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
CATHODE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
(T
A
=25°C)
MIN
TYP
MAX
UNITS
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
200
Unit
°C
°C
°C
°C
mA
V
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SYMBOL
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QED121
Radiant Intensity QED122
Radiant Intensity QED123
Rise Time
Fall Time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA, tp = 20 ms
V
R
= 5 V
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA
!
PE
"
V
F
I
R
I
E
I
E
I
E
t
r
t
f
—
—
—
—
20
50
80
—
—
880
±9
—
—
—
—
—
800
800
—
—
1.7
10
40
100
—
—
—
nm
Deg.
V
µA
mW/sr
mW/sr
mW/sr
ns
ns
1 of 2
100021B
QT [ QT OPTOELECTRONICS ]
