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QT60325-AS 参数 Datasheet PDF下载

QT60325-AS图片预览
型号: QT60325-AS
PDF下载: 下载PDF文件 查看货源
内容描述: 32 , 48 , 64 KEY QMatrix KEYPANEL传感器IC [32, 48, 64 KEY QMatrix KEYPANEL SENSOR ICS]
分类和应用: 传感器
文件页数/大小: 42 页 / 810 K
品牌: QUANTUM [ QUANTUM RESEARCH GROUP ]
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© Quantum Research Group Ltd.  
force an update of eeprom from Flash memory if not  
legitimate.  
operation. To accomplish this, the PLD always clamps all Y  
lines to ground except during the rise of X for the key being  
scanned.  
Charge integrator. The first opamp is configured as an  
integrator with a reset switch; capacitor Cs (C14 in Figure  
3-1, and C7 in Figure 3-2) performs the charge integration  
function. Capacitor Ca (C11 in Figure 3-1 only) acts to absorb  
charge momentarily before the Figure 3-1 opamp can react to  
absorb the charge across Cs; the value of Ca is not critical. A  
P-channel jfet resets Cs between bursts (n-channel mosfet in  
the case of Figure 3-2). The output of the opamp of Figure  
3-1 swings negative, and as a consequence a negative power  
supply is required for that circuit; the circuit of Figure 3-2 is  
unipolar and requires only a positive supply.  
3 Circuit Operation  
Two reference circuits are shown in Figures 3-1 and 3-2.  
Figure 3-1 shows a circuit having slightly greater precision  
and sensitivity than that of Figure 3-2, however both will  
perform well in most situations. Note that the Figure 3-2  
circuit must have the Cs clamp control (command ^S) polarity  
set to 0x01 to operate properly.  
3.1 Part Differences  
QT60xx5 parts use identical circuits and operate in identical  
manner in all respects, except that only the QT60645 can  
acquire 64 keys.  
Charge cancellation. Two Cz capacitors are used to cancel  
charge across Cs in stepwise fashion in order to increase  
signal range. These capacitors can switch during the course  
of a burst to reduce the final output of the amplifier chain,  
preventing early signal saturation due to large keys (high Cx)  
and/or long burst lengths. The Cz's are normally driven to  
+5V when not in use; switching them to ground causes a step  
subtraction of charge from the integrator.  
The QT60325 and QT60485 only acquire 32 and 48 keys  
respectively, but both still use an 8x8 matrix; any 32 or 48  
keys in the matrix can be used. Unused keys must be  
disabled by setting their burst length to zero (command ^F).  
These devices have their upper keys disabled (keys 32 and  
48 and up respectively). Upper keys can be enabled by first  
disabling undesired lower keys so that the maximum number  
of keys is never exceeded during the setup process.  
Signal amplification; offset. At the end of the burst, the  
charge integrator result is amplified, and an offset from an  
R2R ladder DAC driven off the X drive lines is applied. This  
offset repositions the final analog signal as close as possible  
to the center of the ADC span, or at about 2.5V. The amount  
of offset applied is determined during the calibration process.  
3.2 Matrix Scan Sequence  
The circuit operates by scanning each key sequentially, key  
by key. Key scanning begins with location X=0 / Y=0. X axis  
keys are known as rows while Y axis keys are referred to as  
columns. Keys are scanned sequentially by row, for example  
the sequence Y0X0 Y0X1 .... Y0X3, Y1X0 Y1X1... etc.  
Burst / R2R timing. Figure 3-3 relates to a particular key  
being addressed by an X row line and gate control lines YSn.  
At the end of the burst, the X pins drive the R2R ladder  
network to generate a correction offset to the amplifier chain.  
The amplifier must stabilize to within ½ LSB (10mV) 8µs after  
the application of the R2R value so that the signal can be  
accurately sampled by the QT60xx5 on pin Ain.  
Each key is sampled from 1 to 64 times in a burst whose  
length is determined by command ^F. A burst is completed  
entirely before the next key is sampled; at the end of each  
burst the resulting analog signal is converted to digital by the  
parts ADC. The burst length directly impacts key gain; each  
key can have a unique burst length in order to allow tailoring  
of key sensitivity on a key by key basis.  
Signal gain. Gain is directly controlled by burst length,  
amplifier gain, and the value of Cs. Burst length can be  
adjusted on a key by key basis whereas Av and Cs are fixed  
for all keys. See Section 3.6. The detection threshold setting  
also factors directly into key sensitivity.  
3.3 Signal Path  
Refer to Figures 1-4, 3-1, 3-2, and 3-3. Further descriptions  
can be found in Section 1.20.  
3.4 'X' Electrode Drives  
The 'X' lines are directly connected to the matrix without  
buffering. The positive edges of these signals are used to  
create the transient field flows used to scan the keys. Only  
one X line is actively driving the matrix for scanning purposes  
at a time, and it will pulse for a burst lengthfor each key as  
determined by the 'Burst Length' Setups parameter (see  
command ^F, page 25 and Section 3.6).  
Charge gate. Only one X row is pulsed during a burst.  
Charge is coupled across a key's Cx capacitance from the X  
row to all Y columns. A particular key is chosen by gating the  
charge from a single Y column into a charge integrator. The  
gate is an 8:1 analog mux whose path is selected by lines  
YS0, YS1, and YS2; the gate is enabled by a pulse from the  
PLD. The charge integrator is described below.  
3.4.1 RFI FROM X LINES  
Dwell time. The gate must be switched closed just prior to  
the rising edge of X and must be reopened just after X has  
finished rising, in order to capture the charge driven across  
key capacitance Cx. The delay time from the rise of X to the  
opening of the gate is known as the Y-sample dwell time.  
Dwell time duration has a dramatic effect on the suppression  
of signals due to moisture films as described in Section 3.13.  
Dwell time is fixed in these devices to 167ns but this can be  
shortened using an external circuit (Section 3.9).  
X drive lines will radiate a small amount of RFI. This can be  
attenuated if required by using series resistor in-line with  
each X trace; the resistor should be placed near to the  
QT60xx5. Typical values can range from 47 to 470 ohms.  
Excessive amounts of R will cause a counterproductive drop  
in signal strength. RC networks can also be used as shown in  
Figure 4-4.  
Inserted resistors in the X lines also have the positive effect  
of limiting ESD transient currents (Section 3.22).  
Charge neutralization. When X falls again, the charge  
across Cx must be neutralized. Without neutralization, Cx  
charge would be sampled one time only and not again during  
lQ  
9
www.qprox.com QT60xx5 / R1.05