FM18L08
must remain high for at least the minimum precharge
timing specification.
address on the falling edge of /CE, users cannot
ground it as they might with SRAM.
The user dictates the beginning of this operation since
a precharge will not begin until /CE rises. However,
the device has a maximum /CE low time specification
that must be satisfied.
Users who are modifying existing designs to use
FRAM should examine the memory controller for
timing compatibility of address and control pins.
Each memory access must be qualified with a low
transition of /CE. In many cases, this is the only
change required. An example of the signal
relationships is shown in Figure 2 below. Also shown
is a common SRAM signal relationship that will not
work for the FM18L08.
FRAM Design Considerations
When designing with FRAM for the first time, users
of SRAM will recognize a few minor differences.
First, bytewide FRAM memories latch each address
on the falling edge of chip enable. This allows the
address bus to change after starting the memory
access. Since every access latches the memory
The reason for /CE to strobe for each address is two-
fold: it latches the new address and creates the
necessary precharge period while /CE is high.
Valid Memory Signaling Relationship
CE
FRAM
signaling
Address 1
Address 2
Address
Data 1
Data 2
Data
Invalid Memory Signaling Relationship
CE
SRAM
signaling
Address 1
Address 2
Address
Data 1
Data 2
Data
Figure 2. Memory Address Relationships
Rev. 3.4
July 2007
4 of 13
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
