Pre-Production
FM21L16
2Mbit F-RAM Memory
Features
2Mbit Ferroelectric Nonvolatile RAM
•
Organized as 128Kx16
•
Configurable as 256Kx8 Using /UB, /LB
•
10
14
Read/Write Cycles
•
NoDelay™ Writes
•
Page Mode Operation to 33MHz
•
Advanced High-Reliability Ferroelectric Process
SRAM Compatible
•
Industry Std. 128Kx16 SRAM Pinout
•
60 ns Access Time, 110 ns Cycle Time
Advanced Features
•
Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
•
No Battery Concerns
•
Monolithic Reliability
•
True Surface Mount Solution, No Rework Steps
•
Superior for Moisture, Shock, and Vibration
Low Power Operation
•
2.7V – 3.6V Power Supply
•
Low Current Mode (5µA) using ZZ pin
•
Low Active Current (8 mA typ.)
Industry Standard Configuration
•
Industrial Temperature -40° C to +85° C
•
44-pin “Green”/RoHS TSOP-II package
The device is available in a 400 mil 44-pin TSOP-II
surface mount package. Device specifications are
guaranteed over industrial temperature range –40°C
to +85°C.
Pin Configuration
Description
The FM21L16 is a 128Kx16 nonvolatile memory that
reads and writes like a standard SRAM. A
ferroelectric random access memory or F-RAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional disadvantages, and system design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and high write endurance make the
F-RAM superior to other types of memory.
In-system operation of the FM21L16 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The F-RAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM21L16 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in the form of an SRAM.
The FM21L16 includes a low voltage monitor that
blocks access to the memory array when V
DD
drops
below V
DD
min. The memory is protected against an
inadvertent access and data corruption under this
condition. The device also features software-
controlled write protection. The memory array is
divided into 8 uniform blocks, each of which can be
individually write protected.
Ordering Information
FM21L16-60-TG
60 ns access, 44-pin
“Green”/RoHS TSOP-II
FM21L16-60-TGTR 60 ns access, 44-pin
“Green”/RoHS TSOP-II,
Tape & Reel
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Rev. 2.0
Apr. 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
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RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
