Preliminary
FM22L16
4Mbit FRAM Memory
Features
4Mbit Ferroelectric Nonvolatile RAM
•
Organized as 256Kx16
•
Configurable as 512Kx8 Using /UB, /LB
•
10
14
Read/Write Cycles
•
NoDelay™ Writes
•
Page Mode Operation to 40MHz
•
Advanced High-Reliability Ferroelectric Process
SRAM Compatible
•
JEDEC 256Kx16 SRAM Pinout
•
55 ns Access Time, 110 ns Cycle Time
Advanced Features
•
Low V
DD
Monitor Protects Memory against
Inadvertent Writes
•
Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
•
No Battery Concerns
•
Monolithic Reliability
•
True Surface Mount Solution, No Rework Steps
•
Superior for Moisture, Shock, and Vibration
Low Power Operation
•
2.7V – 3.6V Power Supply
•
Low Current Mode (5µA) using ZZ pin
•
18 mA Active Current
Industry Standard Configuration
•
Industrial Temperature -40° C to +85° C
•
44-pin “Green”/RoHS TSOP-II package
Description
The FM22L16 is a 256Kx16 nonvolatile memory that
reads and writes like a standard SRAM. A
ferroelectric random access memory or FRAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional disadvantages, and system design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and unlimited write endurance make
FRAM superior to other types of memory.
In-system operation of the FM22L16 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The FRAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM22L16 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in the form of an SRAM.
The FM22L16 includes a low voltage monitor that
blocks access to the memory array when V
DD
drops
below a critical threshold. The memory is protected
against an inadvertent access and data corruption
under this condition. The device also features
software-controlled write protection. The memory
array is divided into 8 uniform blocks, each of which
can be individually write protected.
The device is available in a 400 mil 44-pin TSOP-II
surface mount package. Device specifications are
guaranteed over industrial temperature range –40°C
to +85°C.
Pin Configuration
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VDD
VSS
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VDD
DQ11
DQ10
DQ9
DQ8
/ZZ
A8
A9
A10
A11
A12
Ordering Information
FM22L16-55-TG
55 ns access, 44-pin
“Green”/RoHS TSOP-II
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.0
Mar. 2007
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
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RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
