Pre-Production
FM24V02
256Kb Serial 3V F-RAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
•
Organized as 32,768 x 8 bits
•
High Endurance 100 Trillion (10
14
) Read/Writes
•
10 year Data Retention
•
NoDelay™ Writes
•
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
•
Up to 3.4 MHz maximum bus frequency
•
Direct hardware replacement for EEPROM
•
Supports legacy timing for 100 kHz & 400 kHz
Device ID and Serial Number
•
Device ID reads out Manufacturer ID & Part ID
•
Unique Serial Number (FM24VN02)
Low Voltage, Low Power Operation
•
Low Voltage Operation 2.0V – 3.6V
•
Active Current < 150
µA
(typ.
@ 100KHz
)
•
90
µA
Standby Current (typ.)
•
5
µA
Sleep Mode Current (typ.)
Industry Standard Configuration
•
Industrial Temperature -40° C to +85° C
•
8-pin “Green”/RoHS SOIC Package
available in industry standard 8-pin SOIC package
using a familiar two-wire (I
2
C) protocol. The
FM24VN02 is offered with a unique serial number
that is read-only and can be used to identify a board
or system. Both devices incorporate a read-only
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The devices are guaranteed over an industrial
temperature range of -40°C to +85°C.
Description
The FM24V02 is a 256Kbit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM24V02 performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance orders of magnitude higher than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24V02 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24V02 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The devices are
Pin Configuration
A0
A1
A2
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Name
A0-A2
SDA
SCL
WP
VDD
VSS
Function
Device Select Address
Serial Data/address
Serial Clock
Write Protect
Supply Voltage
Ground
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Rev. 2.0
May 2010
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
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RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
