欢迎访问ic37.com |
会员登录 免费注册
发布采购

FM25L256B 参数 Datasheet PDF下载

FM25L256B图片预览
型号: FM25L256B
PDF下载: 下载PDF文件 查看货源
内容描述: 256KB串行FRAM存储器3V [256Kb FRAM Serial 3V Memory]
分类和应用: 存储
文件页数/大小: 14 页 / 148 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM25L256B的Datasheet PDF文件第2页浏览型号FM25L256B的Datasheet PDF文件第3页浏览型号FM25L256B的Datasheet PDF文件第4页浏览型号FM25L256B的Datasheet PDF文件第5页浏览型号FM25L256B的Datasheet PDF文件第6页浏览型号FM25L256B的Datasheet PDF文件第7页浏览型号FM25L256B的Datasheet PDF文件第8页浏览型号FM25L256B的Datasheet PDF文件第9页  
FM25L256B
256Kb FRAM Serial 3V Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
Unlimited Read/Write Cycles
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7V – 3.6V
Industry Standard Configurations
Industrial Temperature -40°C to +85°C
8-pin SOIC and 8-pin TDFN Packages
“Green”/RoHS Packaging
Description
The FM25L256B is a 256-kilobit nonvolatile
memory employing an advanced ferroelectric
process. A ferroelectric random access memory or
FRAM is nonvolatile and performs reads and writes
like a RAM. It provides reliable data retention for 10
years while eliminating the complexities, overhead,
and system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L256B performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array
immediately after each byte has been transferred to
the device. The next bus cycle may commence
without the need for data polling. In addition, the
product offers virtually unlimited write endurance.
FRAM also exhibits much lower power consumption
than EEPROM.
These capabilities make the FM25L256B ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L256B provides substantial benefits to
users of serial EEPROM as a hardware drop-in
replacement. The FM25L256B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
FRAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
/CS
SO
/WP
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
SCK
SI
Top View
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage (2.7 to 3.6V)
Ground
Ordering Information
FM25L256B-G
FM25L256B-DG
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin TDFN
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
July 2007
Page 1 of 14