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FM25L04B-G 参数 Datasheet PDF下载

FM25L04B-G图片预览
型号: FM25L04B-G
PDF下载: 下载PDF文件 查看货源
内容描述: 4KB的串行3V F-RAM存储器 [4Kb Serial 3V F-RAM Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管PC
文件页数/大小: 14 页 / 208 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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Preliminary
FM25L04B
4Kb Serial 3V F-RAM Memory
Features
4K bit Ferroelectric Nonvolatile RAM
Organized as 512 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
38 Year Data Retention (
@
+75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.6V
200
µA
Active Current (1 MHz)
3
µA
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS SOIC and TDFN Packages
Description
The FM25L04B is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25L04B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L04B is capable of supporting 10
14
read/write cycles, or a million times more write
cycles than EEPROM.
These capabilities make the FM25L04B ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L04B provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L04B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Top View
/CS
SO
/WP
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25L04B-G
FM25L04B-GTR
FM25L04B-DG
FM25L04B-DGTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
“Green”/RoHS 8-pin TDFN
“Green”/RoHS 8-pin TDFN,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-F-RAM, (719) 481-7000
www.ramtron.com
Rev. 1.3
Feb. 2011
Page 1 of 14