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FM25VN10-G 参数 Datasheet PDF下载

FM25VN10-G图片预览
型号: FM25VN10-G
PDF下载: 下载PDF文件 查看货源
内容描述: 1Mb的串行3V F-RAM存储器 [1Mb Serial 3V F-RAM Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 328 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM25V10 - 1Mb SPI FRAM
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
V
DD
Power Supply Voltage with respect to V
SS
V
IN
Voltage on any pin with respect to V
SS
T
STG
T
LEAD
V
ESD
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Electrostatic Discharge Voltage
- Human Body Model
(AEC-Q100-002 Rev. E)
- Charged Device Model
(AEC-Q100-011 Rev. B)
- Machine Model
(AEC-Q100-003 Rev. E)
Package Moisture Sensitivity Level
Ratings
-1.0V to +4.5V
-1.0V to +4.5V
and V
IN
< V
DD
+1.0V
-55°C to + 125°C
260° C
4kV
1.25kV
200V
MSL-1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions
(T
A
= -40°C to + 85°C, V
DD
= 2.0V to 3.6V unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units
Notes
V
DD
Power Supply Voltage
2.0
3.3
3.6
V
1
I
DD
Power Supply Operating Current
mA
0.3
-
@
C = 1 MHz
mA
3.0
1.5
@
C = 40 MHz
I
SB
Standby Current
90
150
µ
A
2
I
ZZ
Sleep Mode Current
5
8
µ
A
3
I
LI
Input Leakage Current
-
µ
A
4
±1
I
LO
Output Leakage Current
-
µ
A
4
±1
V
IH
Input High Voltage
0.7 V
DD
V
DD
+ 0.3
V
V
IL
Input Low Voltage
-0.3
0.3 V
DD
V
V
OH1
Output High Voltage (
I
OH
= -1 mA, V
DD
=2.7V)
2.4
-
V
V
OH2
Output High Voltage (
I
OH
= -100
µA)
V
DD
-0.2
-
V
V
OL1
Output Low Voltage (
I
OL
= 2 mA, V
DD
=2.7V)
-
0.4
V
V
OL2
Output Low Voltage (
I
OL
= 150
µA)
-
0.2
V
R
IN
Input Resistance (/HOLD pin)
5
For V
IN
= V
IH
(min)
40
KΩ
For V
IN
= V
IL
(max)
1
MΩ
Notes
1.
C toggling between V
DD
-0.2V and V
SS
, other inputs V
SS
or V
DD
-0.2V.
2.
/S=V
DD
. All inputs V
SS
or V
DD
.
3.
In Sleep mode and /S=V
DD
. All inputs V
SS
or V
DD
.
4.
V
SS
V
IN
V
DD
and V
SS
V
OUT
V
DD
.
5.
The input pull-up circuit is stronger (> 40KΩ) when the input voltage is above V
IH
and weak (> 1MΩ) when the input
voltage is below V
IL
.
Data Retention
(T
A
= -40°C to + 85°C)
Parameter
Data Retention
Min
10
Max
-
Units
Years
Notes
Rev. 2.0
May 2010
Page 12 of 16