Preliminary
WM72016
16Kbit Secure F-RAM Memory with Gen-2 RFID
Access & Serial Port Direct Memory Access
DESCRIPTION
The WM72016 is a RFID transponder IC with
nonvolatile memory employing an advanced
ferroelectric process. A ferroelectric random access
memory, or F-RAM, is nonvolatile and performs
reads and writes like a RAM. It provides reliable data
retention for 20 years while eliminating the
complexities, overhead, and system level reliability
problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM‟s, the WM72016 write operations
are zero power – there is no power or speed premium
paid for executing writes into the WM72016 as
compared to read power and speed. Operation of the
memory is fully symmetric: it has an equivalent read
and write range.
The WM72016‟s RFID interface is compatible with
the EPC Class-1 Generation-2 UHF RFID Protocol
for Communications at 860 MHz – 960 MHz,
Version 1.2.0 Specification for RFID Air Interface.
The WM72016 is a two chip configuration offered in
various forms: standard IC package or wafers. All
specifications discussed herein are applicable to the
combined chipset operation.
FEATURES
16 Kbit Ferroelectric Nonvolatile RAM
Organized as 1024 x 16 bits
Very High Read/Write Endurance (> 10
14
)
20-Year Data Retention
Gamma Stability Demonstrated to > 30 kGy
Symmetric Read/Write Operation
Advanced High-Reliability Ferroelectric Process
Interface and Security Features
EPC Class 1 Gen2 (ISO18000-6C) RFID
Compatible Interface (revision 1.2.0)
192-Bit Memory: 96-Bit Electronic Product
Code™ (EPC), 32-Bit Access Password, 32-Bit
KILL Password, 64-Bit TID Memory (Factory
Programmed and Locked)
Inventory, Read, Write and Erase features
Kill Command
Block Permalock Command
Access Command
UHF carrier frequencies from 860 MHz to 960
MHz ISM band, ASK demodulation
Tag-to-reader link frequencies up to 640Kbps
Reader-to-tag asymptotical transmission rates up
to 128Kbps
Supports FM0 and MMS data encoding formats
Serial Port Interface
Custom Features
Stored Address Pointer to Improve Data Write
Speed
Stored Address Pointer Lock
Block Write Command
Variable USER memory block size support
Interrupt Generation
Ultra Low Power Operation
Memory Read/Write Sensitivity: < -6 dBm (typ.)
Industry Standard Configurations
Industrial Temperature -40 C to +85 C
Bumped Wafers
8-pin UDFN
WM72016
RFID Tag
with F-RAM
RFID
Reader
(Class-1
Gen-2)
Figure 1. System Block Diagram
This is a product that has fixed target specifications but are
subject to change pending characterization results.
Rev. 1.4
May 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
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RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
