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RE46C126 参数 Datasheet PDF下载

RE46C126图片预览
型号: RE46C126
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS离子式烟雾探测器专用集成电路与互连 [CMOS Ionization Smoke Detector ASIC with Interconnect]
分类和应用:
文件页数/大小: 8 页 / 170 K
品牌: RANDE [ R & E INTERNATIONAL, INC. ]
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R&E International
RE46C126
CMOS Ionization Smoke Detector ASIC with Interconnect
Product Specification
General Description
The RE46C126 is low power CMOS ionization type
smoke detector IC. With few external components this
circuit will provide all the required features for an
ionization type smoke detector.
An internal oscillator strobes power to the smoke
detection circuitry for 10.5mS every 1.66 seconds to
keep standby current to a minimum. A check for a low
battery condition is performed every 40 seconds when
in standby. . A 2/3 duty cycle continuous horn pattern is
used for the alarm condition.
An interconnect pin allows multiple detectors to be
connected such that when one unit alarms all units will
sound.
Although this device was designed for smoke detection
utilizing an ionization chamber it can be used in a
variety of security applications.
Utilizing low power CMOS technology the RE46C126
was designed for use in smoke detectors that comply
with Underwriters Laboratory Specification UL217 and
UL268.
Features
Guard Outputs for Ion Detector Input
+/-0.75pA Detect Input Current
Internal Reverse Battery Protection
Internal Low Battery Detection
Low Quiescent Current Consumption (<6.5uA)
Available in 16L PDIP or 16L N SOIC
ESD Protection on all Pins
Interconnect up to 40 Detectors
Compatible with MC14468
Available in Standard Packaging or RoHS
Complaint Pb Free Packaging
Pin Configuration
DETCOMP
IO
LBADJ
STROBE
LED
VDD
RBIAS
FEED
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GUARD2
DETECT
GUARD1
VSEN
OSCAP
HS
HB
VSS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Input Voltage Range Except FEED, IO
FEED Input Voltage Range
IO Input Voltage Range
Reverse Battery Time
Input Current except FEED
Operating Temperature
Storage Temperature
Maximum Junction Temperature
SYMBOL
V
DD
V
in
V
infd
V
io1
T
RB
I
in
T
A
T
STG
T
J
VALUE
15
-.3 to V
dd
+.3
-10 to +22
-.3 to 17
5
10
-10 to 60
-55 to 125
150
UNITS
V
V
V
V
S
mA
°C
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used
when handling this product. Damage can occur when exposed to extremely high static electrical charge
Telephone 610.992.0727
Page 1 of 8
E-mail: rande@randeint.com
DS-RE46C126-010907
This datasheet contains PROPRIETARY and CONFIDENTIAL information.
Facsimile 610.992.0734