2N2904
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Symbol
|h
FE
|
h
FE
C
OBO
C
IBO
t
on
t
off
Test Conditions
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
T
A
= -55
O
C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Test Conditions
V
CE
= 20 Volts, I
C
= 50 mA,
f = 100 MHz
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 10 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 2.0 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
CES
I
EBO1
I
EBO2
Test Conditions
I
C
= 10 mA
V
CB
= 60 Volts
V
CB
= 50 Volts
V
CB
= 50 Volts, T
A
= 150
O
C
V
CE
= 40 Volts
V
EB
= 5 Volts
V
EB
= 3.5 Volts
Min
40
10
20
20
1
10
50
Typ
Max
Units
Volts
µA
nA
µA
µA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
20
25
35
40
20
15
Typ
Max
175
120
Units
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
1.3
2.6
0.4
1.6
Volts
Volts
Min
2.0
25
Typ
Max
Units
8
30
pF
pF
45
300
ns
ns
Copyright 2002
Rev. H
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
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