SEMICONDUCTOR
TECHNICAL SPECIFICATION
RECTRON
SMALL SIGNAL DIODE
VOLTAGE RANGE 75 Volts CURRENT 150mAmpere
1N4148W
FEATURES
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*
*
*
*
*
Compact surface mount with same foot print as mini-melf
High Breakdown Voltage
Fast Switching Speed
400mW Power Dissipation
General Purpose Switching Applications
High Conductance
SOD-123
MECHANICAL DATA
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Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.01 gram
.110(2.800)
.102(2.600)
.067(1.700)
.059(1.500)
.026(.650)
.018(.450)
.152(3.850)
.140(3.550)
.006(.150)
.003(.080)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.049(1.250)
.041(1.050)
.004(.100)
.000(0.00)
REF .020(0.500)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(@ T
A
=25
O
C unless otherwise noted)
RATINGS
Non-Repetitive Peak Reverse Voltage
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Forward Comtinuous Current
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
Typical Reverse Recovery Time
Typical Junction Capacitance
Maximum Power Dissipation
Typical Thermal Resistance
Operating and Storage Temperature Range
SYMBOL
V
RM
V
RRM
V
RWM
V
R
V
RMS
I
FM
I
O
@t=1.0uS
@t=1.0S
1N4148W
100
75
53
300
150
2.0
1.0
UNITS
Volts
Volts
Volts
mAmps
mAmps
Amps
nS
pF
mW
O
I
FSM
Trr
C
T
P
D
R
ΘJA
T
J
, T
STG
4
2
400
315
-65 to + 150
1N4148W
0.715
0.855
1.0
25
25
1.0
C/W
O
C
ELECTRICAL CHARACTERISTICS
(@T
A
=25
O
C unless otherwise noted)
SYMBOL
CHARACTERISTICS
Maximum Instantaneous Forward Voltage
@IF=1.0mA
@IF=10mA
@IF=50mA
@IF=150mA
@VR=20V
@VR=75V
UNITS
Volts
V
F
Maximum Instantaneous Reverse Current
.
I
R
nAmps
uAmps
2006-3
RECTRON [ RECTRON SEMICONDUCTOR ]
