RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4148
1N4148 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25
°
C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
75
V
Reverse Recovery
trr
4
ns
Time
Power Dissipation
P
500
mW
3.33mW/
°
C (25
°
C)
Forward Current
IF
300
mA
Junction Temp.
Tj
-65 to 175
°
C
Storage Temp.
Tstg -65 to 175
°
C
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
26 MIN
Dimensions in millimeters
Dimensions (DO-35
)
DO-35
26 MIN
0.457
DIA.
0.559
4.2
max.
2.0
DIA.
max.
Electrical Characteristics (Ta=25
°
C)
Ratings
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 10mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150
°
C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Ω
Symbol
BV
Ratings
75
100
1.0
1.0
Unit
V
IFsurge
VF
IR
A
V
uA
0.025
5.0
50
Cj
4
trr
4
ns
pF
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
RECTRON [ RECTRON SEMICONDUCTOR ]
