RECTRO N
SEM ICO NDU CTO R
TECHN ICAL SPECIFICATIO N
1N4150
1N4150 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items
Symbol
Ratings
Unit
Reverse Voltage
VR
50
V
Reverse Recovery
trr
4
ns
Time
Power Dissipation
P
500
mW
3.33mW /°C (25°C)
Forward Current
IF
200
mA
Junction Temp.
Tj
-65 to 200
°C
Storage Temp.
Tstg
-65 to 200
°C
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
26 MIN
Dim ensions in millim eters
Dimensions (DO-35
)
DO-35
26 MIN
0.457
DIA.
0.559
4.2
m ax.
2.0
DIA.
m ax.
Electrical Characteristics (Ta=25°C)
Ratings
Breakdown Voltage
IR= 5.0uA
Peak Forward Surge Current PW = 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= -IR= 10-200mA, to 0.1 IF
Symbol
BV
IFsurge
VF
IR
Ratings
50
1.0
1.0
Unit
V
A
V
uA
0.10
100
Cj
2.5
trr
4
ns
pF
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
RECTRON [ RECTRON SEMICONDUCTOR ]
