RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1SS187
SOT-23 SWITCHING DIODE
FEATURES
* Power dissipation
P
D
:
150 mW(Tamb=25
O
C)
* Forward current
I
F
:
100 mA
* Reverse voltage
V
R
: 80 V
* Operating and storage junction temperature range
T
J
,T
stg
: -55
O
Cto+150
O
C
SOT-23
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
0.019(2.00)
0.071(1.80)
1
0.118(3.00)
3
0.110(2.80)
2
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Reverse Breakdown Voltage (I
R
=100µA)
Reverse voltage leakage current (V
R
=80V)
Forward voltage (I
F
=100mA)
Diode capacitance (V
R
=0V,f=1MHz)
Reverse recovery time
SYMBOL
V
(BR)
I
R
V
F
C
D
t
rr
MIN.
80
-
-
-
-
TYP.
-
-
-
-
-
MAX.
-
0.5
1.2
4
4
UNITS
V
µA
V
pF
ns
2006-3
o
RECTRON [ RECTRON SEMICONDUCTOR ]
