SEMICONDUCTOR
TECHNICAL SPECIFICATION
RECTRON
2SA812
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
P
CM
:
0.2
* Collector current
I
CM
:
-0.1
* Collector-base voltage
V
(BR)CBO
:
-60
* Operating and storage junction
T
J
,T
stg
: -55
O
C to +150
O
C
W(Tamb=25
O
C)
A
V
temperature range
COLLECTOR
3
SOT-23
MECHANICAL DATA
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Collector - Base Breakdown Voltage(I
C
= -100
mA,
I
E
=0)
Collector - Emitter Breakdown Voltage(I
C
= -1mA, I
B
=0)
Emitter - Base Breakdown Voltage(I
E
= -100
mA,
I
C
=0)
Collector Cut - Off Current (V
CB
= -60V, I
E
=0)
Emitter Cut - Off Current(V
EB
= -5V, I
C
=0)
DC Current Gain(V
CE
= -6V, I
C
= -1mA)
Collector - Emitter Saturation Voltage(I
C
=-100 mA, I
B
= -10mA)
Base - Emitter Voltage(I
C
=-1mA, V
CE
= -6mA)
Tiansition Frequency(V
CE
= -6V, I
C
= -10mA)
CLASSIFICATION OF hFE
Marking
Range
M4
90-180
M5
135-270
M6
200-400
M7
300-600
2006-3
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
MIN
-60
-50
-5
-
-
90
-
-
180
TYP
-
-
-
-
-
-
-
-
-
MAX
-
-
-
-0.1
-0.1
600
-0.3
-0.68
-
UNITS
V
V
V
mA
mA
-
V
V
MH
Z
o
f
T
RECTRON [ RECTRON SEMICONDUCTOR ]
