TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
RECTRON
2SB709A
FEATURES
* Power dissipation
P
CM
:
0.2
W(Tamb=25
O
C)
SOT-23
COLLECTOR
MECHANICAL DATA
*
*
*
*
*
3
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
BASE
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load ,derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Junction and Storage temperature
o
o
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
T
J
,T
stg
VALUE
-45
-45
-7
-200
-55-150
UNITS
V
V
V
mA
O
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= -10mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= -2mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= -10mA, I
C
=0)
Collector cut-off current (V
CB
= -20V, I
E
=0)
Emitter cut-off current (V
CE
= -10V, I
B
=0)
DC current gain (V
CE
= -10V, I
C
= -2mA)
Collector-emitter saturation voltage (I
C
= -100mA, I
B
= -10mA)
Transition frequency (V
CE
= -10V, I
C
= -1mA, f= 200MH
Z
)
Collector output capacitance (V
CB
= -10V, I
E
= 0, f= 1MHz)
CLASSIFICATION OF h
FE
RANK
Range
Marking
Q
160-260
BQ1
R
210-340
BR1
S
290-460
BS1
2006-3
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
MIN
-45
-45
-7
-
-
160
-
60
-
MAX
-
-
-
-0.1
-100
460
-0.5
-
2.7
UNITS
V
V
V
mA
mA
-
V
MHz
P
F
RECTRON [ RECTRON SEMICONDUCTOR ]
