TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
RECTRON
2SC5344
FEATURES
* Power dissipation
P
CM
:
0.2 W (Tamb=25
O
C)
* Collector current
I
CM
:
0.8
A
* Collector-base voltage
V
(BR)CBO
: 35
V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to +150
O
C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 100mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 10mA, I
B
=0)
Emitter-base breakdown voltage(I
E
=10mA, Ic=0)
Collector cut-off current (V
CB
= 35V, I
E
=0)
Emitter cut-off current (V
EB
= 5V, I
C
=0)
DC current gain (V
CE
= 1V, I
C
= 100mA)
Collector-emitter saturation voltage (I
C
= 500mA, I
B
= 50mA)
Transition frequency (V
CE
= 5V, I
C
= 10mA)
Collector output capacitance (V
CB
= 10V, I
E
=0, f= 1MH
Z
)
CLASSIFICATION OF h
FE(1)
RANK
Range
Marking
Q
100-200
FAO
Y
160-320
FAY
2006-3
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
f
T
C
ob
MIN
35
30
5
-
-
100
-
-
-
TYP
-
-
-
-
-
-
-
120
13
MAX
-
-
-
0.1
0.1
320
0.5
-
-
UNITS
V
V
V
mA
mA
-
V
MHz
pF
RECTRON [ RECTRON SEMICONDUCTOR ]
