RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
DUAL SURFACE MOUNT SCHOTTKY
BAT54S
Absolute Maximun Ratings per Diode
(Ta=25
o
C)
Dimensions
SOT-23
Items
Reverse Voltage
Power Dissipation *
Forward Voltage
@ If = 100mA
Forward Current
Junction Temp.
Storage Temp.
Symbol
VR
P
TOT
VF
IF
T
J
T
STG
Ratings
30
300
1.0
200
-55 to 125
-55 to 150
Unit
V
mW
V
mA
o
o
C
C
Mechanical Data
Items
P a cka g e
Lead Frame
Lead Finish
Bond Wire
Mold Resin
Chip
Materials
SOT-23
42 Alloy
Solder Plating
Au
Epoxy
Silicon
Electrical Characteristics per diode (Ta=25
o
C)
Ratings
Minimum Repetitive Peak Reverse Voltage
Maximum Repetitive Peak Forward Current
Maximum Forward Voltage
IF= 100uA
IF= 1mA
IF= 10mA
IF= 30mA
IF= 100mA
Maximum Reverse Current
VR= 25V
Maximum Junction Capacitance
VR= 1V, f= 1MHz
Maximum Reverse Recovery Time
IF= 10mA, IR= 10mA, IRR= 1mA, RL= 100W
Thermal Resistance*
* (Mounted on a 10x8x0.6mm ceramic substrate)
Symbol
VRRM
IFRM
Ratings
30
300
240
320
400
500
1000
2.0
15
5
430
Unit
V
mA
VF
mV
IR
Cj
trr
Rθjc
uA
pF
ns
o
C/W
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
RECTRON [ RECTRON SEMICONDUCTOR ]
